Moiré Synaptic Transistor With Room-temperature Neuromorphic Functionality

Moiré quantum materials are two-dimensional heterostructures that host exotic electronic phenomena through enhanced internal Coulomb interactions. When combined with the high electrostatic control of atomically thin materials, moiré heterostructures have the potential to enable next-generation electronic devices with unprecedented functionality. Here, we report the experimental realization and room-temperature operation of a low-power moiré synaptic transistor based on an asymmetric bilayer graphene/hexagonal boron nitride moiré heterostructure. This device enables hysteretic, non-volatile injection of charge carriers that control the conductance of the device, and can be used for diverse biorealistic neuromorphic functionalities, such as reconfigurable synaptic responses, tempotrons, and input-specific adaptation. This technology can be used for efficient compute-in-memory designs and edge hardware accelerators for artificial intelligence and machine learning.